European standard dual-gate layout; excellent low-noise characteristics.
The 3SK41 represents a pivotal chapter in the history of consumer electronics: The Golden Age of RF:
N-Channel Silicon Dual-Gate MOS Field-Effect Transistor Gate-Source Breakdown Voltage ( 3sk41 datasheet
Enter the , a high-performance N-channel dual-gate MOSFET . Manufactured by industry giants like NEC, Hitachi, and Motorola , this tiny component became the go-to upgrade for legendary transceivers.
): Provides high power gain (typically 15 dB to 20 dB depending on frequency and biasing), which ensures weak incoming signals are boosted efficiently. Input and Output Capacitance ( Cisscap C sub i s s end-sub Cosscap C sub o s s end-sub ): Provides high power gain (typically 15 dB
If designing a new circuit, use these active MOSFETs:
In mixer circuits, the local oscillator signal can be applied to Gate 2 while the RF signal is applied to Gate 1, allowing for efficient frequency conversion with low cross-modulation. Applications & Substitutes Common Uses: Configuration: Dual-Gate N-Channel depletion mode
Gallium Arsenide (GaAs) for superior electron mobility. Configuration: Dual-Gate N-Channel depletion mode. Primary Focus: Low noise figure and high power gain.
Understanding the full 3SK41 datasheet is crucial for choosing proper bias voltages, designing matching networks, or identifying suitable modern cross-references for repair projects. Key Technical Specifications
For detailed and accurate information, we recommend checking with:
is a specialized silicon N-channel dual-gate MOSFET designed primarily for high-frequency radio frequency (RF) applications. It is widely used in tuning and amplification circuits for VHF and UHF signals. Key Technical Specifications